tm ?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA20S120M rev. a FGA20S120M 1200v, 20a shortedanode tm igbt april 2010 absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1: limited by tjmax symbol description ratings units v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 40 a collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @ t c = 25 o c 40 a i f diode continuous forward current @ t c = 100 o c 20 a p d maximum power dissipation @ t c = 25 o c 348 w maximum power dissipation @ t c = 100 o c 174 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case -- 0.43 o c / w r jc (diode) thermal resistance, junction to case -- 0.43 o c / w r ja thermal resistance, junction to ambient -- 40 o c / w g c e to-3pn g c e FGA20S120M 1200v, 20a shortedanode tm igbt features ? high speed switching ? low saturation voltage: v ce(sat) =1.55v @ i c = 20a ? high input impedance ? rohs compliant applications ? induction heating and microwave oven ? soft switching application general description using advanced field stop trench and shortedanode tec hnol- ogy, fairchilds 1200v shortedanode tm trench igbts offer superior conduction and switching performances, and easy par- allel operation with exceptional avalanche capability. this device is designed for induction heating and microwave ov en.
2 www.fairchildsemi.com FGA20S120M rev. a FGA20S120M 1200v, 20a shortedanode tm igbt package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quant ity FGA20S120M FGA20S120M to-3pn - - 30 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 2ma 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 250 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v t c = 25 o c - 1.55 1.85 v i c = 20a , v ge = 15v, t c = 125 o c - 1.75 - v i c = 20a , v ge = 15v, t c = 175 o c - 1.85 - v v fm diode forward voltage i f = 20a , t c = 25 o c -- 1.7 2.2 v i f = 20a , t c = 175 o c -- 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2680 -- pf c oes output capacitance -- 53 -- pf c res reverse transfer capacitance -- 43 -- pf switching characcteristics t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 43 - ns t r rise time - 176 - ns t d(off) turn-off delay time - 310 - ns t f fall time - 320 480 ns e on turn-on switching loss - 0.52 - mj e off turn-off switching loss - 1.43 2.15 mj e ts total switching loss - 1.95 - mj t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 175 o c - 41 - ns t r rise time - 260 - ns t d(off) turn-off delay time - 345 - ns t f fall time - 520 - ns e on turn-on switching loss - 0.78 - mj e off turn-off switching loss - 1.97 - mj e ts total switching loss - 2.75 - mj q g total gate charge v ce = 600v, i c = 20a, v ge = 15v - 208 - nc q ge gate to emitter charge - 18 - nc q gc gate to collector charge - 119 - nc
3 www.fairchildsemi.com FGA20S120M rev. a FGA20S120M 1200v, 20a shortedanode tm igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 20 40 60 80 100 120 140 20v 10v v ge = 7v 8v 17v t c = 25 o c 15v 12v 9v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 20 40 60 80 100 120 140 20v 10v 8v 17v t c = 175 o c 15v 12v 9v v ge = 7v collector current, i c [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 20 40 60 80 100 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 40a 20 a 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGA20S120M rev. a FGA20S120M 1200v, 20a shortedanode tm igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off charact eristics vs. gate resistance gate resistan ce 1 10 2000 4000 6000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 30 60 90 120 150 180 210 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms 10 ms dc 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 2000 0 10 20 30 40 50 60 70 100 1000 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ] 3000 0 10 20 30 40 50 60 70 10 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ] 200 100
5 www.fairchildsemi.com FGA20S120M 1200v, 20a shortedanode tm igbt FGA20S120M rev. a typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs . collector current colle ctor current figure 15. switching loss vs. figure 16. switching loss vs. gate resistance coll ector current figure 17. turn-off switching soa characteristics figure 18. diode forward characteristics collector currrent 10 20 30 40 50 10 100 1000 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 3000 10 20 30 40 50 200 400 600 800 1000 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 0.1 1 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 5 0 10 20 30 40 50 60 70 0.1 1 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ] 5 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 175 o c 30 10 1 t j = 25 o c t j = 175 o c forward voltage, v f [v] forward current, i f [a] 0.1
6 www.fairchildsemi.com FGA20S120M 1200v, 20a shortedanode tm igbt FGA20S120M rev. a figure 19. transient therma l impedeance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.01 0.02 0.1 0.05 0.3 single pulse thermal response [zthjc] rectangular pulse duration [sec] 0.5 t 1 p dm t 2
7 www.fairchildsemi.com FGA20S120M rev. a FGA20S120M 1200v, 20a shortedanode tm igbt mechanical dimensions to-3pn dimensions in millimeters
FGA20S120M 1200v, 20a shortedanode tm igbt www.fairchildsemi.com 8 FGA20S120M rev. a trademarks the following includes registered and unregistered trad emarks and service marks, owned by fairchild semiconductor a nd/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under l icense by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) sup port or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be rea sonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support , device, or system whose failure to perform can be reasonably expected t o cause the failure of the life support device or system, or to a ffect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? ezswitch?* ?* fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product deve lopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data w ill be published at a later date. fairchild semiconductor reserves the right to make ch anges at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semicond uctor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discon tinued by fairchild semiconductor. the datasheet is for reference informatio n only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterfeit ing policy. fairchilds anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing prob lem in the industry. all manufactures of semiconductor pro ducts are experiencing counterfeiting of their parts. customers who inadvertently purchase counterfeit pa rts experience many problems such as loss of brand reputation , substandard performance, failed application, and increased cost of production and manufa cturing delays. fairchild is taking strong measures to prot ect ourselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either dir ectly from fairchild or from authorized fairchild distributors who are listed by country on our web page ci ted above. products customers buy either from fairchild di rectly or from authorized fairchild distributors are genuine parts, have full traceability, meet fairchilds quality standards for handing and stora ge and provide access to fairchilds full range of up-to-date technical and product information. fairchil d and our authorized distributors will stand behind a ll warranties and will appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought f rom unauthorized sources. fairchild is committed to combat this global problem and encourage o ur customers to do their part in stopping this practice b y buying direct or from authorized distributors. rev. i45
|
